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| FDB8443 N-Channel PowerTrench(R) MOSFET August 2007 FDB8443 (R) N-Channel PowerTrench MOSFET 40V, 80A, 3.0m Features Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Typ Qg(10) = 142nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant tm Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator Distributed Power Architecture and VRMs Primary Switch for 12V Systems (c)2007 Fairchild Semiconductor Corporation FDB8443 Rev. A 1 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (TC < 146oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) Parameter Ratings 40 20 80 25 See Figure 4 531 188 1.25 -55 to +175 mJ W W/oC oC Units V V A TJ, TSTG Operating and Storage Temperature Thermal Characteristics RJC RJA RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.8 62 43 o o o C/W C/W C/W Package Marking and Ordering Information Device Marking FDB8443 Device FDB8443 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 32V, VGS = 0V VGS = 20V TC = 150oC 40 1 250 100 V A nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 80A, VGS= 10V ID = 80A, VGS= 10V, TJ = 175oC 2 2.8 2.3 4.2 4 3.0 5.5 m V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 35A Ig = 1mA 9310 800 510 0.9 142 17.5 36 18.8 32 185 23 pF pF pF nC nC nC nC nC FDB8443 Rev. A 2 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics (VGS = 10V) ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 20V, ID = 35A VGS = 10V, RGS = 2 18.4 17.9 55 13.5 58 109 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 35A ISD = 15A ISD = 35A, dISD/dt = 100A/s 0.8 0.8 42 48 1.25 1.0 55 62 V ns nC Notes: 1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8443 Rev. A 3 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Typical Characteristics POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 200 160 120 80 40 0 25 1.0 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY PACKGAE VGS = 10V 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 SINGLE PULSE 1E-3 -5 10 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 IDM, PEAK CURRENT (A) 1000 100 SINGLE PULSE 10 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDB8443 Rev. A 4 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1000 10us 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 LIMITED BY PACKAGE STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms SINGLE PULSE TJ = MAX RATED o TC = 25 C 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 200 VGS = 10V 160 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 5V TJ = 175oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 120 160 VGS = 5V 120 80 40 0 VGS = 4.5V 80 TJ = 25oC TJ = -55oC 40 VGS = 4V 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 VGS, GATE TO SOURCE VOLTAGE (V) 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics ID = 80A rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 60 TJ = 25oC 40 TJ = 175 C o 20 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDB8443 Rev. A 5 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.2 VGS = VDS ID = 250A 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 1mA NORMALIZED GATE THRESHOLD VOLTAGE 1.0 1.10 1.05 1.00 0.95 0.90 -80 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 ID = 35A 10000 CAPACITANCE (pF) Ciss VGS, GATE TO SOURCE VOLTAGE(V) 20000 8 6 4 2 0 VDD = 15V VDD = 20V VDD = 25V Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0 20 40 60 80 100 120 Qg, GATE CHARGE(nC) 140 160 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDB8443 Rev. A 6 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB8443 Rev. A 7 www.fairchildsemi.com |
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